ds30425 rev. 1 - 2 1 of 4 dcx (lo-r1) u www.diodes.com diodes incorporated epitaxial planar die construction built-in biasing resistors lead-free device features maximum ratings npn section @ t a = 25 c unless otherwise specified a m j l d b c h k g f cxx ym mechanical data case: sot-363, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: finish - matte tin solderable per mil-std-202, method 208 terminal connections: see diagram marking: date code and marking code (see diagrams & page 3) weight: 0.006 grams (approx.) ordering information (see page 3) t c u d o r p w e n r 1 r 1 r 2 r 2 r 1 r 1 r 1 , r 2 r 1 only schematic diagram dcx (lo-r1) u complementary npn/pnp pre-biased small signal sot-363 dual surface mount transistor sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm p/n r1 (nom) r2 (nom) marking DCX122LU dcx142ju dcx122tu dcx142tu 0.22k 0.47k 0.22k 0.47k 10k 10k open open c81 c82 c83 c84 characteristic symbol value unit supply voltage v cc 50 v input voltage DCX122LU dcx142ju v in -5 to +6 -5 to +6 v input voltage dcx122tu dcx142tu v ebo (max) 5v output current all i c 100 ma power dissipation (note 2, 3) p d 200 mw thermal resistance, junction to ambient air (note 2) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c note: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 2. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 3. 150mw per element must not be exceeded.
ds30425 rev. 1 - 2 2 of 4 dcx (lo-r1) u www.diodes.com t c u d o r p w e n maximum ratings pnp section @ t a = 25 c unless otherwise specified electrical characteristics npn section r1, r2 types @ t a = 25 c unless otherwise specified characteristic symbol value unit supply voltage v cc -50 v input voltage DCX122LU dcx142ju v in +5 to -6 +5 to -6 v input voltage dcx122tu dcx142tu v ebo (max) -5 v output current all i c -100 ma power dissipation (note 2,3) p d 200 mw thermal resistance, junction to ambient air (note 2,3) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c note: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 2. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf. 3. 150mw per element must not be exceeded. characteristic symbol min typ max unit test condition input voltage DCX122LU dcx142ju v l(off) 0.3 0.3 v v cc = 5v, i o = 100 a DCX122LU dcx142ju v l(on) 2.0 2.0 v v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma output voltage v o(on) 0.3v v i o /i l = 5ma/0.25ma input current DCX122LU dcx142ju i l 28 13 ma v i = 5v output current i o(off) 0.5 a v cc = 50v, v i = 0v dc current gain DCX122LU dcx142ju g l 56 56 v o = 5v, i o = 10ma gain-bandwidth product* f t 200 mhz v ce = 10v, i e = 5ma, f = 100mhz electrical characteristics npn section r1 only @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 40 v i c = 1ma emitter-base breakdown voltage dcx122tu dcx142tu bv ebo 5 v i e = 50 a i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current dcx122tu dcx142tu i ebo 0.5 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c = 5ma, i b = 0.25ma dc current transfer ratio dcx122tu dcx142tu h fe 100 100 250 250 600 600 i c = 1ma, v ce = 5v gain-bandwidth product* f t 200 mhz v ce = 10v, i e = -5ma, f = 100mhz * transistor - for reference only * transistor - for reference only
ds30425 rev. 1 - 2 3 of 4 dcx (lo-r1) u www.diodes.com * transistor - for reference only @ t a = 25 c unless otherwise specified electrical characteristics pnp section r1, r2 types t c u d o r p w e n device packaging shipping DCX122LU-7 sot-363 3000/tape & reel dcx142ju-7 sot-363 3000/tape & reel dcx122tu-7 sot-363 3000/tape & reel dcx142tu-7 sot-363 3000/tape & reel ordering information (note 4) characteristic symbol min typ max unit test condition input voltage DCX122LU dcx142ju v l(off) -0.3 -0.3 v v cc = -5v, i o = -100 a DCX122LU dcx142ju v l(on) -2.0 -2.0 v v o = -0.3v, i o = -20ma v o = -0.3v, i o = -20ma output voltage v o(on) -0.3v v i o /i l = -5ma/-0.25ma input current DCX122LU dcx142ju i l -28 -13 ma v i = -5v output current i o(off) -0.5 a v cc = -50v, v i = 0v dc current gain DCX122LU dcx142ju g l 56 56 v o = -5v, i o = -10ma gain-bandwidth product* f t 200 mhz v ce = -10v, i e = -5ma, f = 100mhz electrical characteristics pnp section r1-only types @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 v i c = -50 a collector-emitter breakdown voltage bv ceo -40 v i c = -1ma emitter-base breakdown voltage dcx122tu dcx142tu bv ebo -5 v i e = -50 a i e = -50 a collector cutoff current i cbo -0.5 a v cb = -50v emitter cutoff current dcx122tu dcx142tu i ebo -0.5 -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) -0.3 v i c = -5ma, i b = -0.25ma dc current transfer ratio dcx122tu dcx142tu h fe 100 100 250 250 600 600 i c = -1ma, v ce = -5v gain-bandwidth product* f t 200 mhz v ce = -10v, i e = 5ma, f = 100mhz * transistor - for reference only marking information cxx ym cxx = product type marking code see sheet 1 diagrams ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd notes: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
ds30425 rev. 1 - 2 4 of 4 dcx (lo-r1) u www.diodes.com t c u d o r p w e n (150mw per element must not be exceeded). -50 050100150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 power deratin g curve p , power dissipation (mw) d
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